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IBM T. J. Watson Research Center - New York -
Research Scientist
Phone: xxx
Web: T.J. Watson
The Central Research Institute of the Electric Power Industry - Japan -
Collaborating Researcher
Phone: xxx
Web: CRIEPI
- Ph.D. in Materials Science, May 2008. Vanderbilt University, Nashville, Tennessee, USA.
- M.S. degree in Materials Science, December 2005. Vanderbilt University, Nashville, Tennessee, USA.
- D.E.A. (M.S.) degree in Physics, June 2003. Université Libre de Bruxelles, Brussels, Belgium.
- B.S. degree in Physics, September 2002. Université Libre de Bruxelles, Brussels, Belgium.
Grande Distinction
- Civil Engineer Candidate degree, September 2000. Université Libre de Bruxelles, Brussels, Belgium.
One of the most famous photos in the history of physics captures the illustrious participants at the fifth Solvay Conference in Brussels, October 1927. Twenty-nine physicists, the main quantum theorists of the day, came together to discuss the topic �Electrons and Photons�. Seventeen of the 29 attendees were or became Nobel Prize winners.
- Alternate gate dielectrics for Si CMOS technology.
- Electrical properties of silicon carbide (SiC) interfaces. Overview.
- Electrical and optical properties of vanadium dioxide (VO2) thin films. Overview.
Electronic properties and reliability of the SiO2/SiC interface
Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond by J. Rozen
In " Physics and Technology of Silicon Carbide Devices", book edited by Yasuto Hijikata, Oct. 2012
INTECH open access publications
Free Access ©John Rozen
Highlight: SiC special topic issue.
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J. Rozen, M. Nagano, and H. Tsuchida,
Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H-SiC surface. J. Mater. Res. 28, 28 (2013).
Available online ©Materials Research Society
Silicon carbide gate oxide and interface properties.
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J. A. Taillon, J. H. Yang, C. A. Ahyi, J. Rozen, J. R. William, L. C. Feldman, T. S. Zheleva, A. J. Lelis, and L. G. Salamanca-Riba, Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 113, 044517 (2013).
Available online ©American Institute of Physics
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J. Rozen, M. Nagano, and H. Tsuchida, Improved deposited oxide interfaces from N2 conditioning of bare SiC surfaces. Mater. Sci. Forums 717, 729 (2012).
Available online ©Trans Tech Publications
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Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, X. Shen,S. T. Pantelides, X. Zhu, L. C. Feldman, J. Rozen, and J. R. Williams, Phosphorus passivation of the SiO2/4H-SiC interface.
Solid-State Electron. 68, 103 (2012).
Available online ©Elsevier
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Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, X. Shen,S. T. Pantelides, X. Zhu, J. Rozen, L. C. Feldman, J. R. Williams, Y. Xu, and E. Garfunkel, The effects of phosphorus at the SiO2/4H-SiC interface.
Mater. Sci. Forums 717, 743 (2012).
Available online ©Trans Tech Publications
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J. Rozen, A. C. Ahyi, X. Zhu, J. R. Williams and L. C. Feldman, Scaling between channel mobility and interface state density in SiC MOSFETs. IEEE Trans. Electron Dev. 58, 3808 (2011).
Download PDF ©IEEE
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A. F. Basile, J. Rozen, J. R. Williams, L. C. Feldman and P. M. Mooney, Capacitance-voltage and deep-level transient spectroscopy characterization of defects near SiO2/SiC interfaces.
J. Appl. Phys. 109, 064514 (2011).
Available online ©American Institute of Physics
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X. Zhu, A. C. Ahyi, M. Li, Z. Chen, J. Rozen, L. C. Feldman and J. R. Williams, The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices.
Solid State Electron. 57, 76 (2011).
Available online ©Elsevier
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A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman and P. M. Mooney, Passivation of deep levels at the SiO2/SiC interface. ECS Trans. 28, 95 (2010).
Available online ©The Electrochemical Society
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J. Rozen, X. Zhu, A. C. Ahyi, J. R. Williams and L. C. Feldman, The limits of post oxidation annealing in NO. Mater. Sci. Forums 645-648, 693 (2010).
Available online ©Trans Tech Publications
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A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman and P. M. Mooney, Effect of NO annealing on 6H- and 4H-SiC MOS interface states. Mater. Sci. Forums 645-648, 499 (2010).
Available online ©Trans Tech Publications
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R. Arora, J. Rozen, D. M. Fleetwood, K. F. Galloway, C. X. Zhang, J. Han, S. Dimitrijev, F. Kong, L. C. Feldman, S. T. Pantelides and R. D. Schrimpf, Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides. IEEE Trans. Nucl. Sci. 56 (6), 3185 (2009).
Available online ©IEEE
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J. Rozen, S. Dhar, M. E. Zvanut, J. R. Williams and L. C. Feldman, Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC.
J. Appl. Phys. 105, 124506 (2009).
Download PDF ©American Institute of Physics
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J. Rozen, S. Dhar, S. Wang, V. V. Afanas'ev, S. T. Pantelides, J. R. Williams and L. C. Feldman, Impact of nitridation on negative and positive charge buildup in SiC gate oxides.
Mater. Sci. Forums 600-603, 803 (2009).
Available online ©Trans Tech Publications
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J. Rozen, S. Dhar, S. K. Dixit, V. V. Afanas'ev, F. O. Roberts, H. L. Dang, S. Wang, S. T. Pantelides, J. R. Williams and L. C. Feldman, Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2 / SiC interface. J. Appl. Phys. 103, 124513 (2008).
Download PDF ©American Institute of Physics
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E. A. Ray, J. Rozen, S. Dhar, J. R. Williams and L. C. Feldman, Pressure dependence of SiO2 growth kinetics and electrical properties on SiC. J. Appl. Phys. 103, 023522 (2008).
Download PDF Erratum ©American Institute of Physics
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S. K. Dixit, S. Dhar, J. Rozen, S. Wang, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, J. R. Williams and L. C. Feldman, Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors. IEEE Trans. Nucl. Sci. 53 (6), 3687 (2006).
Download PDF ©IEEE
Properties of nanocrystalline vanadium dioxide.
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J. Rozen, R. Lopez, R. F. Haglund and L. C. Feldman, Two-dimensional current percolation in nanocrystalline vanadium dioxide films. Appl. Phys. Lett. 88 (8), 081902 (2006).
Download PDF ©American Institute of Physics.
Nuclear Magnetic Resonance: dynamics in Fullerene · 2 Ferrocene solvate.
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J. Rozen, R. Ceolin H. Szwarc and F. Masin, Dynamical model for the C5H5 cycles in the
C60·2 Fe(C5H5)2 solvate, Phys. Rev. B 70, 144206 (2004).
Download PDF ©American Physical Society.
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J. Rozen, R. Ceolin J. L. Tamarit, H. Szwarc and F. Masin, Solid State 13C and 1H NMR Investigations on C60 · 2 ferrocene, AIP Conference Proceedings -- October 20, 2003 -- Volume 685, Issue 1, p. 19.
Download PDF ©American Institute of Physics.
Other Research.
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R. A. Hansel, J. Rozen and D. G. Walker, Transport involving conducting fibers in a non-conducting matrix. Int. J. Therm. Sci. 49, 1561 (2010).
Available online ©Elsevier
These articles can only be read. Any other use requires prior permission of the author and of the publisher.
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